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IXTP44P15T - Power MOSFET

Download the IXTP44P15T datasheet PDF. This datasheet also covers the IXTA44P15T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220, TO-247 & TO-3P) TO-263 TO-220 TO-3P TO-247 300 260 1.13/10 2.5 3.0 5.5 6.0 International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z z z g g Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ±15V, VD.

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Note: The manufacturer provides a single datasheet file (IXTA44P15T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP44P15T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP44P15T. For precise diagrams, and layout, please refer to the original PDF.

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T VDSS ID25 RDS(on) = = ≤ - ...

View more extracted text
IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T VDSS ID25 RDS(on) = = ≤ - 150V - 44A 65mΩ TO-3P (IXTQ) G S D (Tab) G DS D (Tab) G D S Tab Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings - 150 - 150 ±15 ±25 - 44 -130 - 22 1 298 -55 ... +150 150 -55 ... +150 V V V V A A A J W °C °C °C °C °C Nm/lb.in. g g TO-247 (IXTH) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z 1.6mm (0.062 in.