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IXTR102N65X2 - Power MOSFET

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • LAovwalaQnGche Rated.
  • Low Package Inductance Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 51A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA.

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X2-Class Power MOSFET (Electrically Isolated Tab) Advance Technical Information IXTR102N65X2 VDSS = ID25 = RDS(on)  650V 54A 33m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650  30  40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 54 204 25 3 330 50 -55 ... +150 150 -55 ... +150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C 50/60 Hz, 1 Minute 2500 V Mounting Force 20..120/4.5..
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