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PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
VDSS ID25
RDS(on)
= 100 V = 133 A = 8 mΩ
N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g
z z
ISOPLUS 247TM E153432
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ...
IXTR200N10P Datasheet
