IXTR200N10P Description
Advanced Technical Information .. +150 G = Gate S = Source D = Drain.
IXTR200N10P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<30pF)
IXTR200N10P is Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXTR20P50P | Power MOSFET |
| IXTR210P10T | Power MOSFET |
| IXTR102N65X2 | Power MOSFET |
| IXTR120P20T | Power MOSFET |
| IXTR140P10T | Power MOSFET |
Advanced Technical Information .. +150 G = Gate S = Source D = Drain.