Overview: Preliminary Technical Information PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated IXTR20P50P VDSS = ID25 = ≤RDS(on) - 500V - 13A
490mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS
dV/dt
PD TJ TJM Tstg TL TSOLD VISOL
Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force Maximum Ratings - 500 - 500 V V ±20 V ±30 V
-13 A - 60 A
- 20 A 2.5 J 10 V/ns 190 W -55 ... +150 150
-55 ... +150
300 260
t = 1min 2500 t = 1s 3000
20..120 / 4.5..27
5 °C °C °C
°C °C V~ V~
N/lb.
g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = -10A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. - 500 V - 2.5 - 4.
