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TrenchPTM Power MOSFET
IXTR140P10T
P-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = ≤RDS(on)
-100V - 110A
11mΩ
ISOPLUS247 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force
Maximum Ratings -100 -100
±15 ±25
- 110 - 400
-140 2.5
V V
V V
A A
A J
10
270
- 55 ... +150 150
- 55 ... +150
300 260
2500
V/ns W °C °C °C °C °C V~
20..120/4.5..27 5
N/lb.
IXTR140P10T Datasheet
