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PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR170P10P
VDSS = ID25 = ≤RDS(on)
-100V -108A 13mΩ
ISOPLUS247 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg VISOL
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s
Mounting Force
Maximum Ratings -100 -100
V V
±20 ±30
-108 - 510
-170 3.5
V V
A A
A J
10 V/ns
312 W
-55 ... +150 150
-55 ... +150
2500 3000
°C °C °C
V~ V~
300 260
20..120 / 4.5..27
6
°C °C N/lb.
IXTR170P10P Datasheet
