Overview: PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg VISOL
TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Maximum Ratings -100 -100 V V ±20 ±30
-108 - 510
-170 3.5 V V
A A
A J 10 V/ns 312 W -55 ... +150 150
-55 ... +150
2500 3000 °C °C °C
V~ V~ 300 260
20..120 / 4.5..27
6 °C °C N/lb.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250µA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 85A, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.
