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Preliminary Technical Information
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTR120P20T
VDSS = ID25 = ≤RDS(on) trr ≤
- 200V - 90A
32mΩ 300ns
ISOPLUS247 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force
Maximum Ratings - 200 - 200
V V
±15 ±25
- 90 - 400
-100 3
V V
A A
A J
10 V/ns
595 W
-55 ... +150 150
-55 ... +150
300 260
2500
°C °C °C
°C °C
V∼
20..120/4.5..27 5
N/lb.
IXTR120P20T Datasheet
