Overview: Preliminary Technical Information TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTR120P20T VDSS = ID25 = ≤RDS(on) trr ≤ - 200V - 90A
32mΩ 300ns ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings - 200 - 200 V V ±15 ±25
- 90 - 400
-100 3 V V
A A
A J 10 V/ns 595 W -55 ... +150 150
-55 ... +150
300 260
2500 °C °C °C
°C °C
V∼ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 60A, Note 1 Characteristic Values Min. Typ. Max. - 200 V - 2.5 - 4.
