IXTT50N30 Description
+150 °C 300 °C 1.13/10 Nm/lb.in. 300 V 2.0 4.0 V ±100 nA 25 µA 250 µA 65 mΩ TO-247 (IXTH) (TAB) TO-268 (IXTT) GS D (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXTT50N30 Key Features
- easy to drive and to protect
- Source Tab
- di/dt = 100 A/µs