Overview: Advance Technical Information High Current Power MOSFET
N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25
RDS(on) = 300 V
= 50 A = 65 mΩ Symbol
VDSS VDGR VGS VGSM ID25
IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL Md Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V ±20 V ±30 V 50 A 200 A 50 A 50 mJ 1.5 J 5 V/ns 400 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g 5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Characteristic Values Min. Typ. Max. 300 V 2.0 4.
