Overview: Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS =
ID25 = ≤ RDS(on) - 100V - 50A
55mΩ TO-247 (IXTH) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings -100 V -100 V ±20 V ±30 V - 50 A - 200 A - 50 A 30 mJ 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g 5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250 μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 • VDSS VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 3.0 - 5.
