IXTT50P10 Description
+150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. -100 V - 3.0 - 5.0 V ±100 nA - 25 μA -1 mA 55 mΩ G D S TO-268 (IXTT) (TAB) G S (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXTT50P10 Key Features
- easy to drive and to protect
- Part: IXTT50P10
- Manufacturer: IXYS
- Size: 120.87 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXTT50N30 | Power MOSFET |
| IXTT02N450HV | High Voltage Power MOSFET |
| IXTT10N100D2 | Depletion Mode MOSFET |
| IXTT10P60 | Power MOSFET |
| IXTT110N10L2 | Power MOSFET |