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IXTT8P50 - Power MOSFET

Download the IXTT8P50 datasheet PDF. This datasheet also covers the IXTH8P50 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH8P50_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTT8P50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT8P50. For precise diagrams, and layout, please refer to the original PDF.

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 8P50 IXTT 8P50 VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR ...

View more extracted text
D25 = -8 A RDS(on) = 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) TO-247 (IXTH) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings -500 V -500 V ±20 V ±30 V -8 A -32 A -8 A 30 mJ 180 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 250 °C 1.13/10 Nm/lb.in.

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