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IXXN200N65A4 Datasheet Extreme Light Punch Through IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-20kHz Switching IXXN200N65A4 VCES = 650V IC110 = 200A V CE(sat)  1.80V tfi(typ) = 123ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 2, Non Repetitive TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 410 A 200 A 200 A 1200 A ICM = 400 A  @VCE VCES 10 μs 1250 -55 ... +175 175 -55 ... +175 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 4mA, VGE = 0V VGE(th) IC = 3mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 150A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 5.0 6.5 V 10 A 500 A 200 nA 1.44 1.15 1.

Key Features

  • Optimized for Low Conduction and Switching Losses.
  • miniBLOC, with Aluminium Nitride Isolation.
  • International Standard Package.
  • Isolation Voltage 2500V~.
  • Optimized for 5-20kHz Switching.
  • Square RBSOA.
  • Short Circuit Capability.
  • High Current Handling Capability.
  • Easy to Parallel Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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