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IXYH60N90C3 Datasheet High-speed IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: XPTTM 900V IGBT GenX3TM IXYH60N90C3 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 900 V 900 V ±20 V ±30 V 140 A 60 A 310 A ICM = 120 A  @VCE VCES 750 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 950 V 3.5 5.5 V 25 A 750 A 100 nA 2.4 2.9 V 2.9 V VCES = 900V IC110 = 60A V CE(sat)  2.

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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