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IXYX30N170CV1 - IGBT

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA.

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High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYX30N170CV1 VCES = 1700V IC110 = 30A VCE(sat)  3.7V tfi(typ) = 107ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1700 1700 ±20 ±30 V V V V TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms CVlGaEm=p1e5dVIn, dTuVJc=tiv1e5L0o°Cad, RG = 2.7 108 30 45 255 ICM = 120 1360 A A A A A V TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 937 -55 ... +175 175 -55 ... +175 300 260 W °C °C °C °C °C Mounting Force 20..120 /4.5..
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