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IXYX30N170CV1 - IGBT

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IXYS

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IXYX30N170CV1 IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYX30N170CV1

Datasheet Details

Part number	IXYX30N170CV1
Manufacturer	IXYS
File Size	199.01 KB
Description	IGBT
Datasheet	IXYX30N170CV1 Datasheet
Additional preview pages of the IXYX30N170CV1 datasheet.

Product details

Features

High Voltage Package.
High Blocking Voltage.
Low Saturation Voltage Advantages.
Low Gate Drive Requirement.
High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA.

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Published: Aug 19, 2016 |