Download MWI450-12E9 Datasheet PDF
MWI450-12E9 page 2
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MWI450-12E9 page 3
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MWI450-12E9 Description

TVJ = 125°C Clamped inductive load; VCEmax < VCES TC = 25°C Maximum Ratings 1200 V ± 20 V 640 440 ICM = 900 VCEK < VCES 10 A A A µs 2.2 kW Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VGE = ± 20 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600.

MWI450-12E9 Key Features

  • NPT3 IGBT technology
  • low saturation voltage
  • low switching losses
  • square RBSOA, no latch up
  • high short circuit capability
  • MOS input, voltage controlled
  • ultra fast free wheeling diodes
  • solderable pins for PCB mounting
  • package with copper base plate
  • space savings