IXKG25N80C Description
+125 V V A A A mJ mJ V/ns W °C °C °C °C V~ Nm/lb-in g ISO264TM G D S (TAB) G = Gate, S = Source Patent pending D = Drain, VDS < VDSS, IF ≤ 17 A, TVJ = 150°C dIR/dt = 100 A/µs TC = 25°C.
IXKG25N80C Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z 3RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low dra