IXKN45N80C Description
Advanced Technical Information CoolMOS Power MOSFET IXKN 45N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 800 V ID25 44 A RDS(on) 74 mΩ MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 17 A;diF/dt≤ 100 A/µs TVJ = 150°C ID = 4.
IXKN45N80C Key Features
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for reduced EMI
- International standard package SOT-227
- Easy screw assembly fast CoolMOS power MOSFET
- 3rd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness Enhanced total power density
- 332 36 168 25 15 75 10 1.0 1.2