IXKN75N60C Description
CoolMOS Power MOSFET IXKN 75N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 75 A RDS(on) 35 mΩ Preliminary MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 100A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10.
IXKN75N60C Key Features
- miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation due to AlN ceramic substrate
- International standard package SOT-227
- Easy screw assembly fast CoolMOS power MOSFET
- 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)