Datasheet Details
| Part number | 2SA1352 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.44 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1352-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1352.
| Part number | 2SA1352 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.44 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1352-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min) ·plement to Type 2SC3416 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1352 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1352 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SA1355 | POWER TRANSISTOR |
| 2SA1357 | Silicon PNP Power Transistor |
| 2SA1358 | Silicon PNP Power Transistor |
| 2SA1359 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |