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2SA1352 - Silicon PNP Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min) Complement to Type 2SC3416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon PNP Power Transistor 2SA1352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min) ·Complement to Type 2SC3416 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.