Datasheet Details
| Part number | 2SB897 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.77 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB897-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor 2SB897.
| Part number | 2SB897 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.77 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB897-InchangeSemiconductor.pdf |
|
|
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·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1.0 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A ,IB= -25mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A ,IB= -25mA ICBO Collector Cutoff current VCB= -100V, IE= 0 IEBO Emitter Cutoff current VEB= -8V, IC= 0 hFE DC Current Gain IC= -10A ;
VCE= -2V 2SB897 MIN TYP.
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