High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A
Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A
Complement to Type 2SD1210
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency powe
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Darlington Power Transistor
2SB897
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-1.
2SB897 Datasheet
