| Part number | 2SC3550 |
|---|---|
| Datasheet | 2SC3550_InchangeSemiconductor.pdf |
| File Size | 199.02 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
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·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3550 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3552 | Silicon NPN Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |
| 2SC3547A | Silicon NPN RF Transistor |
| 2SC3561 | N-Channel MOSFET Transistor |
