Datasheet Details
| Part number | 2SD2422 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD2422 Datasheet
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| Part number | 2SD2422 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD2422 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO
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