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2SJ376 - P-Channel MOSFET Transistor

Description

Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE

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Datasheet Details

Part number 2SJ376
Manufacturer Inchange Semiconductor
File Size 53.96 KB
Description P-Channel MOSFET Transistor
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INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification 2SJ376 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) -60 V Gate-Source Voltage ±15 V Drain Current-continuous@ TC=37℃ -30 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 3.
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