Datasheet Details
| Part number | 2SJ376 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 53.96 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet | 2SJ376-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product.
| Part number | 2SJ376 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 53.96 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet | 2SJ376-InchangeSemiconductor.pdf |
|
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·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) -60 V Gate-Source Voltage ±15 V Drain Current-continuous@ TC=37℃ -30 A Total Dissipation@TC=25℃ 50 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 3.1 ℃/W 75 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc P-Channel Mosfet Transistor isc Product Specification 2SJ376 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS;
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