Datasheet Details
| Part number | BDX73 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDX73-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDX73 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDX73-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W BDX73 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A ;
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| BDX62B | Silicon PNP Darlington Power Transistor |
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| BDX63A | Silicon NPN Darlington Power Transistor |