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MJB41C Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP41 series ·Pb-free package are available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Pulse 10 A IB Base Current PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2 W 65 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJB41C isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=6A;

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