MJB41C Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=6A; IE= 0 IEBO Emitter Cutoff Current VEB= 5V;.
