MJB42C - Silicon PNP Power Transistor

Datasheet Summary

Description

Lead formed for surface mount applications(NO suffix) Electrically the same as TIP42 series Pb-free package are available Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier and switching applications AB

Inchange Semiconductor

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Part number	MJB42C
Manufacturer	Inchange Semiconductor
File Size	208.74 KB
Description	Silicon PNP Power Transistor
Datasheet	MJB42C Datasheet
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isc Silicon PNP Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP42 series ·Pb-free package are available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse -10 A IB Base Current PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W 65 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJB42C isc website：ww

Published: Nov 11, 2016 |