Datasheet Details
| Part number | MJB42C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.74 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJB42C-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | MJB42C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.74 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJB42C-InchangeSemiconductor.pdf |
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·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP42 series ·Pb-free package are available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse -10 A IB Base Current PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W 65 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJB42C isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC=- 30mA;
IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJB42C | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| MJB41C | Silicon NPN Power Transistor |
| MJB44H11 | Silicon NPN Power Transistor |
| MJB45H11 | Silicon PNP Power Transistor |