Datasheet4U Logo Datasheet4U.com

3DD5E - Silicon NPN Power Transistor

General Description

Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3DD5011 CASE-RATED BIPOLAR TRANSISTOR JILIN SINO-MICROELECTRONICS
3DD5011A9 Silicon NPN Bipolar Transistor Huajing Microelectronics
3DD5011AH Silicon NPN Bipolar Transistor Huajing Microelectronics
3DD5017 CASE-RATED BIPOLAR TRANSISTOR JILIN SINO-MICROELECTRONICS
3DD5017 Low-frequency amplification shell rated bipolar transistors Huajing Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
3DD523 NPN Transistor
3DD5606 NPN Transistor
3DD100A NPN Transistor
3DD100B NPN Transistor
3DD100C NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 3DD5E DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=75℃ TJ Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website：www.iscsemi.