3DD5E Description
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;.
3DD5E is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
JILIN SINO-MICROELECTRONICS |
3DD5011 | CASE-RATED BIPOLAR TRANSISTOR |
Huajing Microelectronics |
3DD5011A9 | Silicon NPN Bipolar Transistor |
Huajing Microelectronics |
3DD5011AH | Silicon NPN Bipolar Transistor |
JILIN SINO-MICROELECTRONICS |
3DD5017 | CASE-RATED BIPOLAR TRANSISTOR |
Huajing Microelectronics |
3DD5017 | Low-frequency amplification shell rated bipolar transistors |
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;.