3DD5E Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;.
| Part number | 3DD5E |
|---|---|
| Datasheet | 3DD5E-Inchange.pdf |
| File Size | 230.18 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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3DD5011 | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO-MICROELECTRONICS |
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3DD5011A9 | Silicon NPN Bipolar Transistor | Huajing Microelectronics |
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3DD5011AH | Silicon NPN Bipolar Transistor | Huajing Microelectronics |
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3DD5017 | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO-MICROELECTRONICS |
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3DD5017 | Low-frequency amplification shell rated bipolar transistors | Huajing Microelectronics |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD523 | NPN Transistor |
| 3DD5606 | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |