Download 2SB1182 Datasheet PDF
2SB1182 page 2
Page 2
2SB1182 page 3
Page 3

2SB1182 Description

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;.