2SD2422 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A ·High DC Current Gain.
2SD2422 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Part Number | Description |
|---|---|
| 2SD2449 | Silicon NPN Darlington Power Transistor |
| 2SD2027 | Power Transistor |
| 2SD2033 | Silicon NPN Power Transistor |
| 2SD2094 | Power Transistor |
| 2SD2095 | Silicon NPN Power Transistors |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A ·High DC Current Gain.