3DD101A Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
- Part: 3DD101A
- Manufacturer: Inchange Semiconductor (official site)
- Size: 191.00 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
SJ |
3DD101A | Power Transistor |
| Shaanxi Qunli Electric Shaanxi Qunli Electric |
3DD101 | NPN Silicon Low Frequency High Power Transistor |
|
SJ |
3DD101B | Power Transistor |
|
SJ |
3DD101C | Power Transistor |
Inchange Semiconductor |
3DD101C | NPN Transistor |