BAV74 Datasheet | Infineon

.. Silicon Switching Diode Array For high-speed switching applications mon cathode 2 1 3 1 2 EHA07004 VPS05161 Type BAV74 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking JAs 1 = A1 Pin Configuration 2 = A2 3 = C1/2 Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 50 50 200 4.5 250 150 -65 ... 150 Unit V m A A m W °C Surge forward current, t = 1 s Total power dissipation, TS = 35 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) Rth JS 460 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Jul-31-2001 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 m A Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 1m A IF = 10 m A, IR = 10 m A, RL = 100 , trr 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max. Unit µA p F ns Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1p F Jul-31-2001 Forward current IF = f (TS...