BTS244Z
BTS244Z is Speed TEMPFET manufactured by Infineon.
BTS 244 Z
Speed TEMPFET
N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with
1 5
VPT05166 thyristor characteristics
Overtemperature protection Avalanche rated
Type BTS 244 Z
VDS 55 V
RDS(on) 13 m
Package P-TO220-5-3 P-TO220-5-62 TO-220-5-43
Ordering Code Q67060-S6000-A2 Q67060-S6003-A2 Q67060-S6008
D Pin 3 and TAB
G Pin 1 A Pin 2
Temperature Sensor
K Pin 4 S Pin 5
Pin 1 2 3 4 5
Symbol G A D K S
Function Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source
2000-05-17
BTS 244 Z
Maximum Ratings Parameter Drain source voltage Drain-gate voltage , RGS = 20 k Gate source voltage Nominal load current (ISO 10483) VGS = 10 V, VDS VGS = 4.5 V, VDS 0.5 V, TC = 85 °C Symbol VDS V Value 55 55 Unit V
VGS ID(ISO)
20
A 19 26
0.5 V, TC = 85 °C
Continuous drain current 1) TC = 100 °C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse ID = 19 A, RGS = 25 Power dissipation TC = 25 °C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1
ID ID puls EAS Ptot Tj Tjpeak Tstg
35 188 1.65 170 -40 ...+175 200 -55 ... +150 E 40/150/56 J W °C
1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C
2 2000-05-17
BTS 244 Z
Thermal Characteristics Parameter Characteristics junction
- case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1)
Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 m A Gate threshold voltage, VGS = VDS ID = 130 µA ID = 250 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 °C VGS = 20 V, VDS = 0 V, Tj...
