BTS282Z
BTS282Z is Speed TEMPFET manufactured by Infineon.
BTS 282 Z
Speed TEMPFET
N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with
1 7
VPT05754
1 7
VPT05167 thyristor characteristics
Overtemperature protection Avalanche rated High current pinning
1 7
Type BTS 282 Z
VDS 49 V
RDS(on) 6.5 m
Package P-TO220-7-3 P-TO220-7-180 P-TO220-7-230
Ordering Code Q67060-S6004-A2 Q67060-S6005-A2 Q67060-S6007
D Pin 4 and TAB
G Pin 2 A Pin 3
Temperature Sensor
K Pin 5 S Pin 1 + 6 + 7
Pin 1 2 3 4 5 6 7
Symbol S G A D K S S
Function Source Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source Source
1 2000-09-11
BTS 282 Z
Maximum Ratings Parameter Drain source voltage Drain-gate voltage , RGS = 20 k Gate source voltage Nominal load current (ISO 10483) VGS = 10 V, VDS VGS = 4.5 V, VDS 0.5 V, TC = 85 °C Symbol VDS V Value 49 49 Unit V
VGS ID(ISO)
20
A 36 52
0.5 V, TC = 85 °C
Continuous drain current 1) TC = 100 °C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse ID = 36 A, RGS = 25 Power dissipation TC = 25 °C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1
ID ID puls EAS Ptot Tj Tjpeak Tstg
80 320 2 300 -40 ...+175 200 -55 ... +150 E 40/150/56 J W °C
1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C
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BTS 282 Z
Thermal Characteristics Parameter Characteristics junction
- case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Rth JC Rth(JA) Rth(JA) 33 0.5 62 40 K/W Symbol min. Values typ. max. Unit
Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 m A Gate threshold voltage, VGS = VDS ID = 240 µA Zero gate voltage drain current VDS = 45 V, VGS = 0 V, Tj = -40 °C VDS = 45 V, VGS = 0 V,...
