IPB03N03LA
IPB03N03LA is Power-Transistor manufactured by Infineon.
OptiMOS®2 Power-Transistor
Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target applications
- N-channel
- Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- 175 °C operating temperature
- dv /dt rated
- Pb-free lead plating; RoHS pliant
IPB03N03LA G
Product Summary V DS R DS(on),max (SMD version) ID
25 V 2.7 mΩ 80 A
PG-TO263-3-2
Type IPB03N03LA G
Package PG-TO263-3-2
Marking 03N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
Pulsed drain current
I D,pulse
T C=100 °C T...
