• Part: IPB03N03LAG
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 290.57 KB
Download IPB03N03LAG Datasheet PDF
Infineon
IPB03N03LAG
IPB03N03LAG is Power-Transistor manufactured by Infineon.
OptiMOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC1) for target applications - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated - Pb-free lead plating; RoHS pliant IPB03N03LA G Product Summary V DS R DS(on),max (SMD version) ID 25 V 2.7 mΩ 80 A PG-TO263-3-2 Type IPB03N03LA G Package PG-TO263-3-2 Marking 03N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2) Pulsed drain current I D,pulse T C=100 °C T...