IPB03N03LB Datasheet | Infineon

OptiMOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC1) for target application - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated - Pb-free lead plating; RoHS pliant Product Summary V DS R DS(on),max ID 30 2.8 80 V mΩ A PG-TO263-3 PG-TO220-3-1 Type IPB03N03LB Package P-TO263-3 Marking 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse...