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IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO252) ID 100 78 13 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G
Package Marking
PG-TO263-3 80CN10N
PG-TO252-3 78CN10N
PG-TO262-3 80CN10N
PG-TO220-3 80CN10N
PG-TO251-3 78CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter
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IPB80CN10NG Datasheet
