Datasheet4U Logo Datasheet4U.com

IPB80N08S2-07 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free) PG-TO263-3-2.
  • Ultra low Rds(on).
  • 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.1 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-T.

📥 Download Datasheet

Datasheet preview – IPB80N08S2-07

Datasheet Details

Part number IPB80N08S2-07
Manufacturer Infineon Technologies
File Size 160.17 KB
Description Power-Transistor
Datasheet download datasheet IPB80N08S2-07 Datasheet
Additional preview pages of the IPB80N08S2-07 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.
Published: |