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SIGC06T120CS - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V NPT technology.
  • 180µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • SGP02N120.

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Datasheet Details

Part number SIGC06T120CS
Manufacturer Infineon Technologies
File Size 95.73 KB
Description IGBT
Datasheet download datasheet SIGC06T120CS Datasheet
Additional preview pages of the SIGC06T120CS datasheet.

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www.DataSheet4U.com SIGC06T120CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • SGP02N120 Applications: • drives, SMPS, resonant applications G E Chip Type SIGC06T120CS VCE 1200V ICn 2A Die Size 2.45 x 2.25 mm2 Package sawn on foil Ordering Code Q67050-A4115A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.45 x 2.25 5.512 / 2.5 1.03x1.29 0.42x0.
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