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BSC010NE2LSI - 25V MOSFET

General Description

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Key Features

  • Optimized for high performance Buck converter.
  • Monolithic integrated Schottky like diode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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BSC010NE2LSI MOSFET OptiMOSTMPower-MOSFET,25V Features •OptimizedforhighperformanceBuckconverter •MonolithicintegratedSchottkylikediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.05 mΩ ID 236 A QOSS 38 nC QG(0V..10V) 59 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC010NE2LSI Package PG-TDSON-8 Marking 010NE2LI RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.