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IMW120R350M1H - 1200V SiC Trench MOSFET

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Infineon

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IMW120R350M1H 1200V SiC Trench MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMW120R350M1H

Datasheet Details

Part number	IMW120R350M1H
Manufacturer	Infineon
File Size	1.24 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMW120R350M1H Datasheet
Additional preview pages of the IMW120R350M1H datasheet.

Product details

Features

Very low switching losses Gate pin 1.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling ef.

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Published: Jul 2, 2020 |