IPB35CN10NG Datasheet | Infineon

Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 34 27 V mΩ A - Ideal for high-frequency switching and synchronous rectification Type IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G Package Marking PG-TO263-3 35CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N PG-TO220-3 35CN10N PG-TO251-3 33CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 27 20 108 47 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=27 A, R GS=25 Ω I D=27 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 58 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V page 1 2006-06-02 Rev.1.02 IPB35CN10N G IPI35CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Thermal resistance, junction ambient (TO251, TO252) R th JC R th JA minimal footprint 6 cm2 cooling area4) minimal footprint 6 cm2 cooling area4) - IPD33CN10N G IPU33CN10N G Unit max. IPP35CN10N G Values typ. 2.6 62 40 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=29 µA V DS=80 V, V GS=0 V, T j=25 °C V DS=80 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I...