IPB35N10S3L-26
IPB35N10S3L-26 is MOSFET manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Ro HS pliant
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
100 V 26.3 m W 35 A PG-TO263-3-2
Type
Package
Marking
PG-TO263-3-2
3N10L26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1)
E AS
I D=17A
Avalanche current, single pulse
I AS
- Gate source voltage2)
V GS
- Power dissipation
P tot
T C=25°C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
-...
