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IPB35N10S3L-26 - MOSFET

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Infineon

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IPB35N10S3L-26 MOSFET by Infineon - Datasheet Preview — Datasheet preview – IPB35N10S3L-26

Datasheet Details

Part number	IPB35N10S3L-26
Manufacturer	Infineon
File Size	811.95 KB
Description	MOSFET
Datasheet	IPB35N10S3L-26 Datasheet
Additional preview pages of the IPB35N10S3L-26 datasheet.

Product details

Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPB35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 26.3 mW 35 A PG-TO263-3-2 Type Package Marking IPB35N10S3L-26 PG-TO263-3-2 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V.

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Published: Dec 20, 2016 |