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IPB35N10S3L-26 - MOSFET

Key Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPB35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 26.3 mW 35 A PG-TO263-3-2 Type Package Marking IPB35N10S3L-26 PG-TO263-3-2 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 26.