IPT020N10N3
IPT020N10N3 is MOSFET manufactured by Infineon.
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM3Power-Transistor,100V IPT020N10N3
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Extremelylowon-resistanceRDS(on)
- Highcurrentcapability
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
2 mΩ
ID 300 A
OptiMOSTM3Power-Transistor,100V IPT020N10N3
HSOF
12345 678
Tab
Drain...
