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IPT020N10N3 - MOSFET

Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Extremely low on-resistance RDS(on).
  • High current capability.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC 1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2.