IPT026N10N5
IPT026N10N5 is MOSFET manufactured by Infineon.
MOSFET
OptiMOSTM5Power-Transistor,100V
Features
- Idealforhighfrequencyswitchingandsync.rec.
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
2.6 mΩ
Qoss
123 nC
QG(0V..10V)
96 nC
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT026N10N5
Package PG-HSOF-8
Marking...
