IPT026N10N5 - MOSFET

Description

Features

Ideal for high frequency switching and sync. rec.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	IPT026N10N5
Manufacturer	Infineon
File Size	0.99 MB
Description	MOSFET
Datasheet	IPT026N10N5 Datasheet
Additional preview pages of the IPT026N10N5 datasheet.

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Full PDF Text Transcription

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IPT026N10N5 MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.6 mΩ ID 202 A Qoss 123 nC QG(0V..10V) 96 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT026N10N5 Package PG-HSOF-8 Marking 026N10N5 RelatedLinks - Final Data Sheet 1 Rev.2.

Published: May 17, 2025 |