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PTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2
PTFA091201F Package H-37248-2
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 959.
PTFA091201E Datasheet
