PTFA091201E
PTFA091201E is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2
PTFA091201F Package H-37248-2
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 m A, ƒ = 959.8 MHz
Features
- - Thermally-enhanced packages Broadband internal matching Typical EDGE performance
- Average output power = 50 W
- Gain = 19.0 d B
- Efficiency = 44% Typical CW performance
- Output power at P- 1d B = 135 W
- Gain = 18.0 d B
- Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Pb-free and Ro HS pliant Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
55 50
- Modulation Spectrum (d Bc)
-10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50
Efficiency
Drain Efficiency (%)
45 40 35
- 400 k Hz
30 25 20
- -
- -
600 k Hz
15 10
Output Power, Avg. (d Bm)
RF Characteristics
EDGE Measurements (not subject to production test- verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 m A, POUT = 50 W, ƒ = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 k Hz Modulation Spectrum @ 600 k Hz Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated
Symbol
EVM (RMS) ACPR ACPR Gps
Min
- -
- -
- Typ
-...
