PTFA091201E Datasheet (Infineon)

Part PTFA091201E
Description Thermally-Enhanced High Power RF LDMOS FETs
Manufacturer Infineon
Size 285.00 KB
Available from Win Source.
Infineon

PTFA091201E Overview

Key Specifications

Mount Type: Screw
Pins: 3
Max Frequency: 960 MHz
Max Operating Temp: 200 °C

Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance
  • Average output power = 50 W
  • Gain = 19.0 dB
  • Efficiency = 44% Typical CW performance
  • Output power at P–1dB = 135 W

Price & Availability

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