Datasheet Details
| Part number | PTFA091201E |
|---|---|
| Manufacturer | Infineon |
| File Size | 285.00 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FETs |
| Datasheet |
 PTFA091201E Datasheet
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General Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Key Features
- include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz Features.
- Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output po.