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PTFA091201F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA091201F datasheet PDF. This datasheet also covers the PTFA091201E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz Features.
  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output po.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA091201E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA091201F
Manufacturer Infineon
File Size 285.00 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA091201F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.