PTFA091201F Datasheet (Infineon)

Part PTFA091201F
Description Thermally-Enhanced High Power RF LDMOS FETs
Manufacturer Infineon
Size 285.00 KB
Pricing from 99.99 USD, available from Component Stockers USA and Worldway Electronics.
Infineon

PTFA091201F Overview

Key Specifications

Mount Type: Surface Mount
Pins: 3
Operating Voltage: 28 V
Max Frequency: 960 MHz

Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance
  • Average output power = 50 W
  • Gain = 19.0 dB
  • Efficiency = 44% Typical CW performance
  • Output power at P–1dB = 135 W

Price & Availability

Seller Inventory Price Breaks Buy
Component Stockers USA 226 1+ : 99.99 USD View Offer
Worldway Electronics 13000 7+ : 45.9954 USD
10+ : 45.0755 USD
100+ : 43.6956 USD
500+ : 42.3158 USD
View Offer