PTFA091203EL
PTFA091203EL is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
Description
The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability..
PTFA091203EL Package H-33288-6
Features
Two-carrier WCDMA Performance
3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 d B VDD = 30 V , IDQ = 1.05 A
- Broadband internal matching
-15
Intermodulation Distortion (d Bc)
-20 -25 -30 -35 -40 -45 -50 -55
Drain Efficiency (%)
960 MHz 940 MHz 920 MHz IMD Up
Efficiency di
32 34 sc
36 38 n o
40 42 d e u n ti
40 35 30 25 20 15 10 5 0 46 48 IMD Low
- Typical two-carrier WCDMA performance, 960 MHz, 30 V
- Average output power = 28 W
- Gain = 17 d B
- Efficiency = 27%
- Intermodulation Distortion =
- 36 d Bc
- Typical CW performance, 960 MHz, 30 V
- Output power at P1d B = 140 W
- Gain = 17 d B
- Efficiency = 54%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 30 V, 120 W (CW) output power
- Pb-free and Ro HS-pliant d o r p t c u
Output Power (d Bm)
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1050 m A, POUT = 28 W Avg ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.0 d B @ 0.01% CCDF Characteristic
Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device- observe handling precautions! Data Sheet
- DISCONTINUED 1 of 10 Rev. 06, 2013-05-16
Symbol
Gps
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