Datasheet4U Logo Datasheet4U.com

PTFA091201GL - Thermally-Enhanced High Power RF LDMOS FETs

Datasheet Summary

Description

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Features

  • include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz 0 55 50.
  • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and R.

📥 Download Datasheet

Datasheet preview – PTFA091201GL

Datasheet Details

Part number PTFA091201GL
Manufacturer Infineon
File Size 308.71 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA091201GL Datasheet
Additional preview pages of the PTFA091201GL datasheet.

📁 Similar Datasheet

  • PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
Other Datasheets by Infineon
  • PTFA091201E - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091201F - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091201HL - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091203EL - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091503EL - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092201E - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092201F - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092211EL - Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

Click to expand full text
PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
Published: |