PTFA181001F Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.
PTFA181001F Key Features
- Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V
- Output power at P-1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
- 28 -33 -38 -43 -48 -53 34 36 38 40
- See Infineon distributor for future availability