BAV70T Description
150 Value °C Unit K/W calculation of RthJA please refer to Application Note 2 Mar-10-2004 BAV70... at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. CT trr - - 1.5 4 pF ns Pulse generator:.
BAV70T is Silicon Switching Diode manufactured by Infineon .
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BAV70T | High-speed switching diodes |
Won-Top Electronics |
BAV70T | SURFACE MOUNT FAST SWITCHING DIODE |
Formosa MS |
BAV70T | SMD Small Signal Switching Diode |
Semiware Semiconductor |
BAV70T | Surface Mount Fast Switching Doide |
KEC |
BAV70T | SILICON EPITAXIAL PLANAR DIODE |
150 Value °C Unit K/W calculation of RthJA please refer to Application Note 2 Mar-10-2004 BAV70... at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. CT trr - - 1.5 4 pF ns Pulse generator:.